This paper examines the use of deep reactive ion etching drie of silicon with fluorine highdensity plasmas at cryogenic temperatures to produce silicon master molds for. Drie system rie800ipb is a high performance inductively coupled plasma icp etching system. The plasma is generated under low pressure vacuum by an electromagnetic field. New deep reactive ion etching process developed for the. Deep reactiveion etching drie is used to produce highaspectratio structures in wafers. Reactive ion etching rie, also known as plasma etching or dry etching, and its extension deep reactive ion etching drie are processes that combine physical and chemicals effects to remove material from the wafer surface. Drie provides anisotropic selective silicon etching and is the only way to provide fast, highaspect ratio silicon micromachining with precise feature definition and etch profile control. New developments in deep reactive ion etchers promise to eliminate such impediments. Wafer dicing using dry etching on standard tapes and frames. Etch and repeat cycle directional ions clear passivation from bottom only. Deep reactiveion etching drie is a highly anisotropic etch process used to create deep penetration, steepsided holes and trenches in waferssubstrates, typically with high aspect. Reactive ion etching rie is a high resolution mechanism for etching materials using reactive gas discharges. Here, chemically reactive radial is formed in plasma and accelerated towards the substrate.
Deep etching, however, requires a multilayer niai mask. Plasma etching techniques including rie, pe, icp, and drie. Introduction the use of plasma etching techniques for fabrication of devices in silicon has gained widespread use. Deep reactive ion etching drie is a highly anisotropic etch process used to create deep penetration, steepsided holes and trenches in wafers substrates, typically with high aspect ratios. A special handle wafer used in deep reactive ion etch drie processing when the device substrate is expected to etch through the wafer and potentially damage the. Afterward, isotropic wet andor dry etching was utilized. Reactive ion etching is a further development of reactive ion etching and was originally developed in the early 1990s by robert bosch gmbh. Reactive ion etching is an anisotropic processreactive ion etching is an anisotropic process. By shrinking the size of the substrate, substantial savings can be realized in material usage, energy consumption, and, most importantly, capital costs. Deep reactiveion etching drie is a highly anisotropic etch process used to create deep penetration, steepsided holes and trenches in waferssubstrates. A twolevel prediction model for deep reactive ion etch drie. We used a homemade magnetically enhanced, inductively coupled plasma reactive ion etcher meicprie. The potential of combining topdown fabrication methods with the.
Pdf a continuous sf6o2 plasma process at room temperature has been used to etch tapered throughsilicon vias using a drieicp tool. Reactiveion etching rie is an etching technology used in microfabrication. This system uses a nitrogencooled chuck, and is capable of etch rates of 0. New deep reactive ion etching process developed for the microfabrication of silicon carbide sem image of a microscale tensile test specimen in the process of fabrication using sf6 and. The primary technology of drie is the bosch process, which was named after the german company robert bosch which filed the original patent. Our drieicp features a high plasma density, a low pressure during the process, a high. Deep reactive ion etching as a tool for nanostructure. Reactive ion etching rie, also known as plasma etching or dry etching, and its extension deep reactive ion etching drie are processes that combine. Silicon carbide sic is a promising material for harsh environment sensors and.
Design, fabrication, and characterization of a compact deep. In this thesis, we present the development of the first tool in this suite of small substrate processing equipment, a deep reactive ion etcher drie. Pdf continuous deep reactive ion etching of tapered via holes for. Therefore, the silicon nanotips are well aligned along the edges of the patterned photoresist. Samco was the first japanese semiconductor process equipment manufacturer to offer drie systems using the bosch process. Effects of deep reactive ion etching parameters on etching rate and. A method for tapered deep reactive ion etching using a. Therefore, it is urgent to investigate and solve the problem of how to acquire a harse structure with a high etch rate and good surface. Ee143 f2010 lecture 14 1 etching etching terminology etching considerations for ics wet etching reactive ion etching plasma etching professor n cheung, u. Deep reactiveion etching, most commonly the bosch process 3,4, is the. Control of trenching and surface roughness in deep.
While a standard rie process can be used, they are often inadequate so a couple of variations have been developed for specific applications. Deep reactive ion etching drie high etch rate, superior profile control, smooth surface, excellent selectivity for etch depths greater than 100 m deep etching of silicon, achieved using the bosch process or cryogenic microfabrication technologies, is routinely used for mems manufacturing to create deep microstructures with high aspect ratios. Deep reactive ion etching drie or deep silicon etching dse is an industryleading technology for creating high aspect ratio features in silicon for mems and nanotechnology applications. The system, capable of etching up to 4 wafers, was designed to provide all the highperformance features of the larger rie800ipb in an easytouse, easyto. Drie, which is sometimes referred to as bosch etching, relies on alternating cycles of ion assisted chemical etching sf6 and polymer deposition c4f8 to achieve parallel sidewalls. Drie deep reactive ion etch high aspect ratio up to 50. A drie system capable of etching 200 p,m deep with vertical walls 20zm in width was recently presented 18. Silicon fusion bonding and deep reactive ion etching. A plasma etching technique, deep reactive ion etch drie, has evolved to meet these mems requirements. The icp source generates a highdensity plasma due to inductive coupling between the rf antenna and plasma. Reactive ion etching systems rie etch process plasma etch.
Cyclic deep reactive ion etching cdrie is an advanced rie process and was originally developed at the beginning of the 1990s by f. Introduction deep reactive ion etching drie is a means of etching deep, high aspect ratio. Deep reactive ion etching the bosch process photoresist mask. Rie uses chemically reactive plasma to remove material deposited on wafers. During rie etching processes, volatile compounds are formed in interaction of sample surfaces and highenergy ionsradicals generated by lowpressure plasma. Deep reactive ion etching request pdf researchgate. Reactive ion etching rie and deep reactive ion etching drie can also be considered to be forms of chemical etching as they both employ a chemical reaction between the film material and the gaseous etchant to remove material.
First, 5 h etching experiments using etching gases with 0%, 5%, 10% and 20% oxygen were performed by. The most notable difference between reactive ion etching and isotropic plasma etching is the etch direction. Deep reactive ion etching drie is used to create deep, steep sided features in silicon wafers with aspect ratios etch depthfeature width beyond 10. Maximum achievable aspect ratio in deep reactive ion. The volatile compounds are removed from the sample surfaces, and isotropic or anisotropic. Cryogenic deep reactive ion etching of silicon micro and nanostructures manuscript submitted 7. Fabrication of sharp silicon hollow microneedles by deepreactive. Deepreactive ion etching enables highly anisotropic. The second type is reactive ion beam etching or ribe where a chemically reactive gas such as sf 6, chf 3, cf 4, o 2 or cl 2 other gases can also be used is usually added to ar or other inert. It is a highly controllable process that can process a wide variety of materials, including semiconductors, dielectrics and some metals.
With the addition of our spts 200mm pegasus ase drie, we now offer deep reactive ion etch drie, a technique used in advanced mems device fabrication. Fabrication and application of selfmasked silicon nanostructures. Ion bombardment removes the passivation layer from horizontal. The rie400ipb is an inductively coupled plasma rie system that uses highdensity plasma to perform high speed silicon etching required in the fabrication of mems and electronic devices. Rie800ipb is a high performance inductively coupled plasma icp etching system that uses highdensity plasma to perform deep silicon etching required by mems and tsv applications. The technique is developed and licensed by robert bosch gmbh 1 and relies on the repeated alternation of isotropic silicon etching and passivation steps to obtain anisotropic pro les. Deep reactive ion etching of pyrex glass has been characterized in sulfur hexafluoride plasma sf6. A new concept for spatially divided deep reactive ion.
Reactive ion etching systems rie plasma etching samco inc. Deep silicon etching system the rie400ipb is an inductively coupled plasma rie system that uses. Maximum achievable aspect ratio in deep reactive ion etching. This chapter discusses reactive ion etching and deep reactive ion etching on wafers detailing the various equipment and reactor requirements for different applications. It was further developed in the following years and made commercially available. Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect junghoon yeom, yan wu, john c. Therefore, the process is also called bosch process. Often termed a dry etch, both the etchant and the resultant byproducts are gaseous in nature. Memsii lecture 2 dry etching i university of florida. The plasma will etch in a downward direction with almost no sideways etching.
Overview in pdf format isbn 9789512298679 1889 kb dissertation is also available in print isbn 9789512298662 abstract. Deep reactive ion etcher the plasma lab icp 180 is also a reactive ion etcher but it has the capability to do bosch etching and cryo etching. It was developed for microelectromechanical systems mems, which require these features, but is also used to excavate trenches for highdensity. Samco was the first japanese semiconductor process equipment. Introduction deep reactive ion etching drie is a means of etching deep, high aspect ratio 30. Control of trenching and surface roughness in deep reactive ion etched 4h and 6h sic glenn m.
New deep reactive ion etching process developed for the microfabrication of silicon carbide sem image of a microscale tensile test specimen in the process of fabrication using sf6 and ar plasma. Design, fabrication, and characterization of a compact. A special handle wafer used in deep reactive ion etch drie processing when the device substrate is expected to etch through the wafer and potentially damage the chuck underneath the substrate. Deep reactive ion etching an overview sciencedirect topics. Deep reactive ion etching of pyrex glass using sf6 plasma. Rie reactive ion etching represents a combination of physical and chemical erosion. Ee143 f2010 lecture 14 etching university of california. Sep 23, 2017 reactive ion etching rie is an etching technology used in microfabrication. This thesis focuses on cryogenic deep reactive ion etching.
Deep reactive ion etching drie of silicon has become a key process in the fabrication of microelectromechanical systems mems. Grayscale lithography and deep reactive ion etching. The process stands out for its precision and its potential applications to mass production. Etching systems drie deep reactive ion etching systems rie400ipb.
The reason for this difference is largely due to the quite low selectivity of the etching mask used. Deep reactive ion etching drie is a type of reactive ion etching aimed at creating very deep, high aspect ratio structures. Deep reactive ion etching as a tool for nanostructure fabrication. This is accomplished in part by using a switched gas scheme that includes both a passivation and etch step, otherwise known as. Samco provides silicon deep reactive ion etching drie systems for mems device fabrication and tsv viahole etching. Etching systems drie deep reactive ion etching systems rie800ipb. Silicon nanotips are generated along the sidewalls formed by the. It is a highly controllable process that can process a wide variety of materials. Deep reactive ion etching is enabled by equipment that can achieve high density of reactive species, and independent control of ion current and ion energy. Deep reactive ion etching drie is investigated as a tool for the realization. Singlecrystal sic has been etched to a depth of 80 m.
This thesis focuses on cryogenic deep reactive ion etching drie and presents how it can. A versatile tool for microelectromechanical systems article pdf available in journal of micromechanics and microengineering 84. During rie etching processes, volatile compounds are formed in interaction of sample surfaces. The technique is commonly referred to as the bosch. Reactiveion etching rie vs deep reactiveion etching drie.
Shannona department of mechanical and industrial engineering, university of illinois at urbanachampaign, 1206 west green street, urbana, illinois 61801. Translation find a translation for deep reactive ion etched in other languages. Deposit passivation c4f8 produces a teflonlike polymer 4. While a standard rie process can be used, they are often inadequate. Deep reactive ion etching is another thing altogether cl. Reactive ion etching rie is a plasma etching technology to fabricate micro and nanostructures.
Deep, steepsided holes and trenches can be easily created in the wafers using drie see figure 2. The most common plasma etch configurations are reactive ion etch rie, planar etch pe, inductively. Evans nasa glenn research center, 2 brookpark rd, cleveland, oh, 445 abstract an optimized deep reactive ion etching drie process for the fabrication of sic microstructures has been developed. Ideally any etching method would etch straight down to create a trench with steep sidewalls. The rie800ipb is a dedicated silicon etching system specifically designed for the bosch process licensed from robert bosch gmbh.
Deep reactive ion etch, drie, bosch process, conditioning recipe, seasoning recipe 1. In this article, we describe more than 100mm deep reactive ion etching rie. The most common plasma etch configurations are reactive ion etch rie, planar etch pe, inductively coupled plasma etch icp etch, or deep reactive ion etch drie etch. Its main strength is the high aspect ratio that can be reached, up to 30. Plasma etching techniques are typically classed by the configuration of the electrodes. This technology is based on multistep deep reactive ion etching technique developed in the 1990s for silicon based mems devices.
The fabrication of patternable silicon nanotips using deep. In this paper we combine the standard bosch process with dry isotropic etching to achieve controlled tapering of the sidewalls. Silicon drie systems deep reactive ion etching samco inc. Deep reactive ion etch drie rogue valley microdevices. Deep reactive ion etching inductively coupled plasma drieicp is a highly anisotropic process to create tridimensional features in a silicon wafer wafer or other materials.
Reactive ion etching rie, also known as plasma etching or dry etching, and its extension deep reactive ion etching drie are processes that combine physical and chemicals effect to remove. Reactive ion etching systems rie etch process plasma. Rie is a type of dry etching which has different characteristics than wet etching. Reactive ion etching rie is an etching technology used in microfabrication. A plasma creates ions, and neutral species that are drawn to a biased electrode. Deep reactive ion etching drie or deep silicon etching dse. While rie provides a much stronger etch, it also provides a directional etch.